Digital DLTS studies on radiation induced defects in Si, GaAs and GaN
Since the development of deep level transient spectroscopy (DLTS) in the 1970’s by Lang and others, the technique has become a powerful analytical tool to characterise the electrical properties of defects in semiconductors. With the development of more powerful computers and improved data acquisitio...
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2013
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| Online Access: | http://hdl.handle.net/2263/25602 Meyer, W 2007, Digital DLTS studies on radiation induced defects in Si, GaAs and GaN, PhD thesis, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/25602 > http://upetd.up.ac.za/thesis/available/etd-06182007-143820/ |