Design and manufacture of nanometre-scale SOI light sources

Design and manufacture of nanometre-scale SOI light sources

To investigate quantum confinement effects on silicon (Si) light source electroluminescence (EL) properties like quantum efficiency, external power efficiency and spectral emission, thin Si finger junctions with nanometre-scale dimensions were designed and manufactured in a fully customized silicon-...

Full description

Bibliographic Details
Main Author: Bogalecki, Alfons Willi
Other Authors: Prof M du Plessis
Published: 2013
Subjects:
Electron-beam lithography
Impurity redistribution
Soi buried oxide light reflection
Soi wafer manufacture
Soi light sources
Silicon light source
Silicon electroluminescence
Silicon infrared light emission
Quantum confinement
Nanometre-scale soi
UCTD
Online Access:http://hdl.handle.net/2263/22806
Bogalecki, AW 2009, Design and manufacture of nanometre-scale SOI light sources, MEng dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/22806 >
http://upetd.up.ac.za/thesis/available/etd-01112010-172357/

Internet

http://hdl.handle.net/2263/22806
Bogalecki, AW 2009, Design and manufacture of nanometre-scale SOI light sources, MEng dissertation, University of Pretoria, Pretoria, viewed yymmdd < http://hdl.handle.net/2263/22806 >
http://upetd.up.ac.za/thesis/available/etd-01112010-172357/

Similar Items