On the characterisation of copper indium diselenide based photovoltaic devices

• Main Author: Thantsha, Nicolas Matome
• Format: Others
• Language: English
• Published: Nelson Mandela Metropolitan University 2006
• Subjects: Photovoltaic cells
• Online Access: http://hdl.handle.net/10948/443

Photovoltaic (PV) modules based on thin film systems of CuInSe2 (CIS) and its alloys on low cost substrates are promising candidates to meet the long term efficiency, reliability and manufacturing cost goals. The attention to the CIS solar cell technology is because of the high absorption coefficient of the solar cell absorber layer. Solar cells and PV modules are conventionally assessed by measuring the currentvoltage characteristic of the device. This thesis presents an assessment procedure developed capable of assessing the device parameters with reference to I-V measurements. This thesis then characterizes the performance of the CIS based solar cells and modules in conjunction with other PV modules of different technologies such as crystalline Silicon modules by analyzing the light and dark I-V measurements of the devices. The light and dark I-V characteristics of PV devices were investigated and device parameters were extracted from the I-V data. The extraction and interpretation of these device parameters has a variety of important applications. It has been proven that the device parameters can be used for quality control during production and to provide insights into the operation of the PV devices, thereby improving the efficiency of the devices. The assessment comprises light I-V measurements at standard test conditions (STC), irradiance dependence measurements, parasitic series and shunt resistances measurements and the dark I-V measurements of the PV devices. The PV modules assessed comprise different technologies, namely, thin film based modules (CIS and a-Si) and multicrystalline Si and Edged-defined Film-fed Growth Si (EFG-Si). The dark I-V measurements results showed that the EFG-Si module has acceptable shunt (900 W) and series (0.4 W) resistances, thereby leading to the higher power output depicted from the light I-V measurements. The low quality cells of a-Si module were so low that the fill factor was the smallest (43%). In addition, the dark I-V measurements results revealed that CIS modules are less dependent to temperature at high voltages.