Characterisation of InAs-based epilayers by FTIR spectroscopy
This study focuses on the characterization of InAs and InAs1-xSbx epitaxial layers by infrared reflectance and transmittance spectroscopy and Hall measurements. Reflectance measurements were performed in order to obtain the dielectric parameters and to extract from these information about the electr...
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| Format: | Others |
| Language: | English |
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Nelson Mandela Metropolitan University
2007
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| Online Access: | http://hdl.handle.net/10948/474 |