| Summary: | The development of new materials and processes for electronic devices has been driven by the integrated circuit (IC) industry since the dawn of the computer era. After several decades of '"Moore's Law"-type innovation, future miniaturization may be slowed down by materials and processing limitations. By way of comparison, the nascent field of flexible electronics is not driven by the smallest possible circuit dimension, but instead by cost and form-factor where features typical of 1970s CMOS (i.e., channel length - IO μm) will enable flexible electronic technologies such as RFID, e-paper, photovoltaics and health monitoring devices. In this thesis. cyclohexasilane is proposed and used as a key reagent in solution processing of poly-Si and Co-Si thin films with the former used as the active layer in thin film transistors (TFTs) and the latter as the gate metal in metal-oxide-semiconductor (MOS) capacitors. A work function of 4.356 eV was determined for the Co-Si thin films via capacitance-voltage (C-Y) characterization which differs slightly from that extracted from ultraviolet photoemission spectroscopy (UPS) data (i.e., 4.8 eV). Simulation showed the difference between the C-V and UPS-derived data may be attributed to the existence of 8.3 x 10 (exponent 10) cm-2 interface charge density in the oxide-semiconductor junction. Poly-Si TFTs prepared using Si6 H12-based inks maintained the following electrical attributes: field effect mobility of 0.1 cm2V-1s-1; threshold voltage of 66 V; and, an on/off ratio of 1630. A BSIM3 version 3 NFET model was modified through global parametric extraction procedure to match the transfer characteristics of the fabricated poly-Si TFT. It is anticipated that this model can be utilized for future design simulation for solution-processed poly-Si circuits.
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