Optical properties and microstructures of β-FeSi₂ in silicon.

• Other Authors: Sun, Caiming.
• Format: Others
• Language: English; Chinese
• Published: 2008
• Subjects: Electrooptics; Optoelectronics; Semiconductors > Optical properties; Silicon > Optical properties
• Online Access: http://library.cuhk.edu.hk/record=b6074667; http://repository.lib.cuhk.edu.hk/en/item/cuhk-344300

A metal-oxide-silicon (MOS) tunneling diode is utilized to embed beta-FeSi 2 precipitates and give strong 1.5 tam electroluminescence at 80 K. And this simple MOS structure with beta-FeSi2 was fabricated by Fe ion implantation and rapid thermal oxidation (RTO) at 900°C, which is fully compatible with ultra-large scale integration (ULSI) processes. === beta-FeSi2 precipitates are also incorporated into a silicon-on-insulator (SOI) rib waveguide and a p+-i-n+ photodetector is monolithically integrated with this SOI rib waveguide. The photoresponse to 1550 nm laser of beta-FeSi2 precipitates was observed and compared to intrinsic silicon. === Beta-phase iron disilicide (beta-FeSi2) is a semiconductor that can act as a light emitting material at the wavelength of 1.55 mum and can also be grown epitaxially on Si substrates. In this thesis, Fe ion implantation into silicon using a metal vapor vacuum arc (MEVVA) ion source was performed to synthesize nano-scale beta-FeSi2 precipitates in silicon matrix. The implantation was performed at ∼-120°C and the effects of silicon substrate and conditions for the following thermal annealing on luminescence properties were studied. The samples were characterized by employing various analytical techniques including Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), atomic force microscope (AFM), photoluminescence (PL), and electroluminescence (EL). === It is found that the PL intensity is optimized in p-100 silicon substrates (with the resistivity of 15-25 O·cm) using Fe ion implantation at a voltage of 80 kV and dosage of 5x1015 cm -2. Formation of beta-FeSi2 can be completed after rapid thermal annealing (RTA) and strong photoluminescence is present. We also found that RTA could maintain the strain in beta-FeSi2 precipitates and there exists an epitaxial relationship between beta-FeSi2 and silicon. Additional furnace annealing at 850°C can relax the strain in beta-FeSi2 precipitates. === The development of both modern microelectronics and lightwave technologies has enabled the establishment of the Internet which has introduced a profound change in our everyday lives. Because of Moore's law, computing today is limited less by the computation ability of microprocessors than by the rate at which the processor can communicate with the outside world. Lightwave technology has had many successes in the long-haul communication field over the past decade. The advantages of lightwave technology over conventional electronics are becoming apparent for shorter and shorter reach applications and lightwave communications may eventually replace copper-based interconnects in microelectronics. To make possible optical interconnects, optical components, especially light emitters may be needed to be integrated on conventional silicon microchips. However, to date, no efficient on-chip silicon-based light emitter is fabricated in silicon photonics. === Sun, Caiming. === Adviser: Hon K. Tsang. === Source: Dissertation Abstracts International, Volume: 70-06, Section: B, page: 3703. === Thesis (Ph.D.)--Chinese University of Hong Kong, 2008. === Includes bibliographical references. === Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. === Electronic reproduction. [Ann Arbor, MI] : ProQuest Information and Learning, [200-] System requirements: Adobe Acrobat Reader. Available via World Wide Web. === Abstracts in English and Chinese. === School code: 1307.