Nano-sized group III oxides prepared by implantation-assisted growth techniques.

In this project, nano-sized gallium oxide and indium oxide produced by ion implantation of nitrogen/carbon and subsequent rapid thermal annealing (RTA) have been investigated. The material synthesis technique is based on using implantation of different species, which include nitrogen, carbon, oxygen...

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Other Authors: Lo, Kwong Chun.
Format: Others
Language:English
Chinese
Published: 2008
Subjects:
Online Access:http://library.cuhk.edu.hk/record=b6074552
http://repository.lib.cuhk.edu.hk/en/item/cuhk-344185
id ndltd-cuhk.edu.hk-oai-cuhk-dr-cuhk_344185
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spelling ndltd-cuhk.edu.hk-oai-cuhk-dr-cuhk_3441852019-02-19T03:39:45Z Nano-sized group III oxides prepared by implantation-assisted growth techniques. CUHK electronic theses & dissertations collection Gallium compounds--Synthesis Indium compounds--Synthesis Nanostructured materials In this project, nano-sized gallium oxide and indium oxide produced by ion implantation of nitrogen/carbon and subsequent rapid thermal annealing (RTA) have been investigated. The material synthesis technique is based on using implantation of different species, which include nitrogen, carbon, oxygen and argon, with variable implant dosage to form an amorphous surface layer on GaAs or InP substrates. RTA then provides the required thermal energy for the amorphous material to re-crystallize. We found that the type of implanted species play an important role in controlling the material for nation during the RTA stage. Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were conducted to provide detailed characterization on the samples. For the nitrogen/carbon implanted samples, RTA at 950°C resulted in the formation of single crystalline Ga2O3 nano-ribbons on the sample surface. These Ga2O3 ribbons possess strong visible photoluminescence and cathodoluminescence. For the carbon implanted InP samples, In2O3 nanowires were found on the InP sample surface when RTA was performed at 750°C. However, In2O 3 nanowires only occurred when gold was present. On the other hand, when the nitrogen implanted samples were annealed in pure nitrogen ambient, a Raman peak at 577cm-1 associated with GaN was observed. Cross-sectional TEM showed that the thickness of the region containing GaN was about 40nm. We also used the synthesized GaN as a buffer layer to grow ZnO film by using MOCVD. The possible formation mechanisms of these nanomaterials and the role of the implanted species are discussed. For the nanowires with gold nano-particles at the free end, we believe that they are synthesized by vapour-liquid-solid (VLS) mechanism. On the other hand, the growth of nano-wires in the cases where no gold nano-particles on the free end may be explained on the basis of a vapour-solid (VS) mechanism. For the case of carbon or nitrogen implantation, carbon works as a reduction agent and nitrogen favours the formation of group III nitride template, which may lead of the growth of nano-wires. Lo, Kwong Chun. "March 2008." Adviser: Aaron H. P. Ho. Source: Dissertation Abstracts International, Volume: 70-03, Section: B, page: 1887. Thesis (Ph.D.)--Chinese University of Hong Kong, 2008. Includes bibliographical references (p. 112-119). Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. Electronic reproduction. [Ann Arbor, MI] : ProQuest Information and Learning, [200-] System requirements: Adobe Acrobat Reader. Available via World Wide Web. Abstracts in English and Chinese. School code: 1307. Lo, Kwong Chun. Chinese University of Hong Kong Graduate School. Division of Electronic Engineering. 2008 Text theses electronic resource microform microfiche 1 online resource (xiv, 119 p. : ill.) cuhk:344185 isbn: 9781109048452 http://library.cuhk.edu.hk/record=b6074552 eng chi Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) http://repository.lib.cuhk.edu.hk/en/islandora/object/cuhk%3A344185/datastream/TN/view/Nano-sized%20group%20III%20oxides%20prepared%20by%20implantation-assisted%20growth%20techniques.jpghttp://repository.lib.cuhk.edu.hk/en/item/cuhk-344185
collection NDLTD
language English
Chinese
format Others
sources NDLTD
topic Gallium compounds--Synthesis
Indium compounds--Synthesis
Nanostructured materials
spellingShingle Gallium compounds--Synthesis
Indium compounds--Synthesis
Nanostructured materials
Nano-sized group III oxides prepared by implantation-assisted growth techniques.
description In this project, nano-sized gallium oxide and indium oxide produced by ion implantation of nitrogen/carbon and subsequent rapid thermal annealing (RTA) have been investigated. The material synthesis technique is based on using implantation of different species, which include nitrogen, carbon, oxygen and argon, with variable implant dosage to form an amorphous surface layer on GaAs or InP substrates. RTA then provides the required thermal energy for the amorphous material to re-crystallize. We found that the type of implanted species play an important role in controlling the material for nation during the RTA stage. Raman spectroscopy, scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were conducted to provide detailed characterization on the samples. For the nitrogen/carbon implanted samples, RTA at 950°C resulted in the formation of single crystalline Ga2O3 nano-ribbons on the sample surface. These Ga2O3 ribbons possess strong visible photoluminescence and cathodoluminescence. For the carbon implanted InP samples, In2O3 nanowires were found on the InP sample surface when RTA was performed at 750°C. However, In2O 3 nanowires only occurred when gold was present. On the other hand, when the nitrogen implanted samples were annealed in pure nitrogen ambient, a Raman peak at 577cm-1 associated with GaN was observed. Cross-sectional TEM showed that the thickness of the region containing GaN was about 40nm. We also used the synthesized GaN as a buffer layer to grow ZnO film by using MOCVD. The possible formation mechanisms of these nanomaterials and the role of the implanted species are discussed. For the nanowires with gold nano-particles at the free end, we believe that they are synthesized by vapour-liquid-solid (VLS) mechanism. On the other hand, the growth of nano-wires in the cases where no gold nano-particles on the free end may be explained on the basis of a vapour-solid (VS) mechanism. For the case of carbon or nitrogen implantation, carbon works as a reduction agent and nitrogen favours the formation of group III nitride template, which may lead of the growth of nano-wires. === Lo, Kwong Chun. === "March 2008." === Adviser: Aaron H. P. Ho. === Source: Dissertation Abstracts International, Volume: 70-03, Section: B, page: 1887. === Thesis (Ph.D.)--Chinese University of Hong Kong, 2008. === Includes bibliographical references (p. 112-119). === Electronic reproduction. Hong Kong : Chinese University of Hong Kong, [2012] System requirements: Adobe Acrobat Reader. Available via World Wide Web. === Electronic reproduction. [Ann Arbor, MI] : ProQuest Information and Learning, [200-] System requirements: Adobe Acrobat Reader. Available via World Wide Web. === Abstracts in English and Chinese. === School code: 1307.
author2 Lo, Kwong Chun.
author_facet Lo, Kwong Chun.
title Nano-sized group III oxides prepared by implantation-assisted growth techniques.
title_short Nano-sized group III oxides prepared by implantation-assisted growth techniques.
title_full Nano-sized group III oxides prepared by implantation-assisted growth techniques.
title_fullStr Nano-sized group III oxides prepared by implantation-assisted growth techniques.
title_full_unstemmed Nano-sized group III oxides prepared by implantation-assisted growth techniques.
title_sort nano-sized group iii oxides prepared by implantation-assisted growth techniques.
publishDate 2008
url http://library.cuhk.edu.hk/record=b6074552
http://repository.lib.cuhk.edu.hk/en/item/cuhk-344185
_version_ 1718977589603729408