study of chemical and electronic properties of silicon nitride and silicon oxynitride thin films =: 氮化硅與氮氧化硅薄膜的化學與電子性質的硏究.

• Other Authors: Ng, Yun-hung.
• Format: Others
• Language: English; Chinese
• Published: 1999
• Subjects: Microelectronics > Materials; Silicon nitride; Thin films
• Online Access: http://library.cuhk.edu.hk/record=b5890149; http://repository.lib.cuhk.edu.hk/en/item/cuhk-322908

by Yun-hung Ng. === Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. === Includes bibliographical references. === Text in English; abstracts in English and Chinese. === by Yun-hung Ng. === Abstract --- p.ii === 論文摘要 --- p.iii === Acknowledgements --- p.iv === Table of Contents --- p.v === List of Figures --- p.ix === List of Tables --- p.xi === Chapter Chapter 1 --- INTRODUCTION --- p.1 === Chapter 1.1 --- Background of Study --- p.1 === Chapter 1.2 --- General Properties of a-SiNx and a-SiOxNy --- p.1 === Chapter 1.3 --- Common Preparation Methods of a-SiNx and a-SiOxNy --- p.2 === Chapter 1.4 --- Applications of a-SiNx in Microelectronics --- p.4 === Chapter 1.5 --- Applications of a-SiOxNy in Microelectronics --- p.6 === References --- p.8 === Chapter Chapter 2 --- METHODOLOGY --- p.10 === Chapter 2.1 --- Introduction --- p.10 === Chapter 2.2 --- Mott Rule --- p.10 === Chapter 2.3 --- Random Mixture Model --- p.11 === Chapter 2.4 --- Random Bonding Model --- p.12 === Chapter 2.5 --- Hasegawa Model --- p.15 === References --- p.20 === Chapter Chapter 3 --- INSTRUMENTATION --- p.21 === Chapter 3.1 --- X-ray Photoelectron Spectroscopy (XPS) --- p.21 === Chapter 3.1.1 --- Fundamental Theory of XPS --- p.21 === Chapter 3.1.2 --- Qualitative Analysis using XPS --- p.25 === Chapter 3.1.2.1 --- Chemical Shift --- p.25 === Chapter 3.1.2.2 --- Angular Effect on XPS --- p.28 === Chapter 3.1.2.3 --- Valence Band Investigation --- p.28 === Chapter 3.1.3 --- Quantitative Analysis using XPS --- p.30 === Chapter 3.1.4 --- Instrumental Setup of XPS --- p.33 === Chapter 3.2 --- Ultraviolet Photoelectron Spectroscopy --- p.37 === Chapter 3.2.1 --- Basic Theory of UPS --- p.37 === Chapter 3.2.2 --- Instrumentation --- p.38 === References --- p.41 === Chapter Chapter 4 --- SHORT RANGE ORDER OF a-SiNx --- p.42 === Chapter 4.1 --- Sample Preparation --- p.42 === Chapter 4.2 --- XPS Analysis of a-SiNx --- p.43 === Chapter 4.2.1 --- Angle Resolved XPS Analysis --- p.43 === Chapter 4.2.2 --- RB Model and RM Model Simulation of a-SiNx --- p.43 === Chapter 4.2.3 --- Intermediate Mixture (IM) Model --- p.50 === Chapter 4.2.4 --- Valence Band Structure of a-SiNx --- p.51 === Chapter 4.3 --- Raman Measurements --- p.54 === Chapter 4.4 --- Photoluminescence of a-SiNx --- p.54 === Chapter 4.5 --- Large Scale Potential Fluctuations in a-SiNx --- p.56 === Chapter 4.6 --- Conclusion --- p.61 === References --- p.62 === Chapter Chapter 5 --- MOTT RULE VERIFICATION OF a-SiOxNy --- p.65 === Chapter 5.1 --- Sample Preparation --- p.65 === Chapter 5.2 --- Validity of Mott Rule on a-SiOxNy --- p.66 === Chapter 5.3 --- Conclusion --- p.73 === References --- p.74 === Chapter Chapter 6 --- SHORT RANGE ORDER OF a-SiOxNy --- p.75 === Chapter 6.1 --- Angle Resolved XPS Analysis --- p.75 === Chapter 6.2 --- Random Bonding Model Simulation of a-SiOxNy --- p.75 === Chapter 6.3 --- Conclusion --- p.79 === References --- p.82 === Chapter Chapter 7 --- CONCLUSIONS --- p.83