Photoluminescence of InN with Mg and Zn Dopants

Photoluminescence of InN with Mg and Zn Dopants

The optical properties of Mg-doped InN thin films grown on YSZ substrates have been investigated by photoluminescence (PL). A series of InN:Mg samples with various Mg cell temperatures (TMg) were produced by molecular beam epitaxy. The effect of Mg concentration on PL emission properties have been e...

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Bibliographic Details
Main Author:	Song, Young Wook
Language:	en
Published:	University of Canterbury. Physics and Astronomy 2008
Subjects:	InN (p-doped) photoluminescence semiconductor
Online Access:	http://hdl.handle.net/10092/1638

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