Indium Nitride: An Investigation of Growth, Electronic Structure and Doping
The growth, electronic structure and doping of the semiconductor InN has been explored and analysed. InN thin films were grown by plasma assisted molecular beam epitaxy. The significance of the relative fluxes, substrate temperature and buffer layers was explored and related to the electrical and...
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| Language: | en |
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University of Canterbury. Electrical and Computer Engineering
2008
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| Online Access: | http://hdl.handle.net/10092/1087 |