Development of InGaN quantum dots by the Stranski-Krastanov method and droplet heteroepitaxy
The development of InGaN quantum dots (QDs) is both scientifically challenging and promising for applications in visible spectrum LEDs, lasers, detectors, electroabsorption modulators and photovoltaics. Such QDs are typically grown using the Stranski-Krastanov (SK) growth mode, in which accumulated i...
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| Language: | en_US |
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2017
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| Online Access: | https://hdl.handle.net/2144/20851 |