Development of aluminum gallium nitride based optoelectronic devices operating in deep UV and terahertz spectrum ranges
Thesis (Ph.D.)--Boston University === In this research project I have investigated AIGaN alloys and their quantum structures for applications in deep UV and terahertz optoelectronic devices. For the deep UV emitter applications the materials and devices were grown by rf plasma-assisted molecular bea...
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| Language: | en_US |
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Boston University
2015
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| Online Access: | https://hdl.handle.net/2144/11093 |