Investigation of buffer charging effects in GaN-based transistors
GaN based transistors are investigated in this work. GaN devices have already been introduced for commercial applications for RF and power markets. Due to excellent performance achieved with GaN devices, predictions for even greater commercial success have been made. Some major reliability issues th...
| Main Author: | |
|---|---|
| Other Authors: | |
| Published: |
University of Bristol
2018
|
| Subjects: | |
| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.761113 |