| Summary: | The work here presented is focused around the design, characterization and ultimately first demonstration of a deep ultraviolet, frequency tripled semiconductor disk laser (SDL). The construction of such a laser is described, together with a review of the relevant theory and investigation of the underlying processes in order to improve the system. SDLs based on gallium indium phosphide have attracted intense investigation over the last ten years for their fundamental emission in the 660nm-690nm (visible red emission), a region previously only available to SDLs by means of nonlinear frequency conversion. Such frequency conversion applied to red SDLs provides access to the highly energetic ultraviolet region of the electromagnetic spectum but, although its conversion to the near ultraviolet has been rather successful, further extension into the deep UV presents a new set of challenges that must be addressed in order to achieve efficient laser emission. 78 μW of deep ultraviolet emission at 225nm have been achieved in continuous-wave operation. The output wavelength is tunable for 350 cm-1. This is the shortest wavelength emitted from an SDL to date and is the first implementation of intracavity frequency tripling in a visible SDL.
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