Growth of III-V solar cells on silicon by Molecular Beam Epitaxy : towards monolithic III-V/Si tandem multijunction devices
Epitaxial growth of III-V materials on silicon (Si) presents an elegant pathway in order to develop high efficiency III-V/Si multijunction solar cells. Such devices could overcome the 29.4 % efficiency limit inherent to single-junction crystalline silicon (c Si) solar cells while maintaining the com...
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University College London (University of London)
2017
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.747007 |