Strain measurements in silicon using X-ray interferometry
The aim of this work was to investigate by X-ray interferometer techniques the strain induced in silicon after thermal oxidation and boron diffusion processing. An elasticity model was developed by which the resulting strain and interferometer moire fringe pattern could be predicted when the oxidati...
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University of Edinburgh
1979
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.663424 |