Semiconductor nanowires grown by molecular beam epitaxy for electronics applications

One-dimensional nanostructures such as semiconductor nanowires are very attractive for application in next generation electronics. This work presents an experimental study of InAs-based and ZnO-based nanowires grown by molecular beam epitaxy for electronics applications. InAs, InAsP and InAsSb nanow...

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Bibliographic Details
Main Author: Isakov, I.
Published: University College London (University of London) 2015
Subjects:
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.647272