Molecular beam epitaxy and characterisation of GaAsBi for photovoltaic applications
GaAsBi is a promising candidate material for a 1 eV junction for multi-junction photovoltaics, as well as having many other potential applications in areas such as telecommunications and spintronics. The growth of GaAsBi has proven problematic due to the large size and low electronegativity of the B...
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University of Sheffield
2014
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.632576 |