Thermal disorder in ionic crystals

The conductance and space-charge polarization capacity of single crystals of thallous chloride have been measured as a function of frequency between 350°K. and temperatures approaching the melting point. Correlation with available diffusion data indicates that Schottky disorder is present with the c...

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Main Author: Jackson, Brian John Hayden
Published: Imperial College London 1968
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Online Access:https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.623055
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spelling ndltd-bl.uk-oai-ethos.bl.uk-6230552019-03-05T15:35:07ZThermal disorder in ionic crystalsJackson, Brian John Hayden1968The conductance and space-charge polarization capacity of single crystals of thallous chloride have been measured as a function of frequency between 350°K. and temperatures approaching the melting point. Correlation with available diffusion data indicates that Schottky disorder is present with the chlorine ion vacancy as the predominant charge carrier. Analysis of the capacitance results using a modified space-charge theory gives new values of the enthalpies of formation and motion of the vacancies present. Thus ∆Hs = 1.36 eV. ; ∆Hm(cv) = 0.40 eV. ; ∆Hm(av) = 0.09 eV. The defect concentration at the melting point is ~0.08 atomic %. Similar measurements on thallous bromide show that Schottky defects probably exist in this material with the bromine ion vacancy the more mobile species. The characteristic defect parameters for the bromide closely resemble those for the chloride.530.4Imperial College Londonhttps://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.623055http://hdl.handle.net/10044/1/15894Electronic Thesis or Dissertation
collection NDLTD
sources NDLTD
topic 530.4
spellingShingle 530.4
Jackson, Brian John Hayden
Thermal disorder in ionic crystals
description The conductance and space-charge polarization capacity of single crystals of thallous chloride have been measured as a function of frequency between 350°K. and temperatures approaching the melting point. Correlation with available diffusion data indicates that Schottky disorder is present with the chlorine ion vacancy as the predominant charge carrier. Analysis of the capacitance results using a modified space-charge theory gives new values of the enthalpies of formation and motion of the vacancies present. Thus ∆Hs = 1.36 eV. ; ∆Hm(cv) = 0.40 eV. ; ∆Hm(av) = 0.09 eV. The defect concentration at the melting point is ~0.08 atomic %. Similar measurements on thallous bromide show that Schottky defects probably exist in this material with the bromine ion vacancy the more mobile species. The characteristic defect parameters for the bromide closely resemble those for the chloride.
author Jackson, Brian John Hayden
author_facet Jackson, Brian John Hayden
author_sort Jackson, Brian John Hayden
title Thermal disorder in ionic crystals
title_short Thermal disorder in ionic crystals
title_full Thermal disorder in ionic crystals
title_fullStr Thermal disorder in ionic crystals
title_full_unstemmed Thermal disorder in ionic crystals
title_sort thermal disorder in ionic crystals
publisher Imperial College London
publishDate 1968
url https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.623055
work_keys_str_mv AT jacksonbrianjohnhayden thermaldisorderinioniccrystals
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