High-K gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistors

Bibliographic Details
Main Author:	Tse, Koon-Yiu
Published:	University of Cambridge 2008
Subjects:	620
Online Access:	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611979

id	ndltd-bl.uk-oai-ethos.bl.uk-611979
record_format	oai_dc
spelling	ndltd-bl.uk-oai-ethos.bl.uk-6119792015-11-03T04:18:04ZHigh-K gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistorsTse, Koon-Yiu2008620University of Cambridgehttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611979Electronic Thesis or Dissertation
collection	NDLTD
sources	NDLTD
topic	620
spellingShingle	620 Tse, Koon-Yiu High-K gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistors
author	Tse, Koon-Yiu
author_facet	Tse, Koon-Yiu
author_sort	Tse, Koon-Yiu
title	High-K gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistors
title_short	High-K gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistors
title_full	High-K gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistors
title_fullStr	High-K gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistors
title_full_unstemmed	High-K gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistors
title_sort	high-k gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistors
publisher	University of Cambridge
publishDate	2008
url	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.611979
work_keys_str_mv	AT tsekoonyiu highkgateoxidesandmetalgatematerialsforfuturecomplementarymetaloxidesemiconductorfieldeffecttransistors
_version_	1718122685427351552

High-K gate oxides and metal gate materials for future complementary metal-oxide-semiconductor field-effect transistors

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