Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs
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2011
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ndltd-bl.uk-oai-ethos.bl.uk-6096432015-11-03T04:18:04ZModelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETsLin, Liang2011620University of Cambridgehttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609643Electronic Thesis or Dissertation |
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620 |
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620 Lin, Liang Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs |
author |
Lin, Liang |
author_facet |
Lin, Liang |
author_sort |
Lin, Liang |
title |
Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs |
title_short |
Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs |
title_full |
Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs |
title_fullStr |
Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs |
title_full_unstemmed |
Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs |
title_sort |
modelling of high-k gate oxides on gaas and ge based high mobility mosfets |
publisher |
University of Cambridge |
publishDate |
2011 |
url |
http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609643 |
work_keys_str_mv |
AT linliang modellingofhighkgateoxidesongaasandgebasedhighmobilitymosfets |
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1718122521023217664 |