Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs

Bibliographic Details
Main Author: Lin, Liang
Published: University of Cambridge 2011
Subjects:
620
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609643
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spelling ndltd-bl.uk-oai-ethos.bl.uk-6096432015-11-03T04:18:04ZModelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETsLin, Liang2011620University of Cambridgehttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609643Electronic Thesis or Dissertation
collection NDLTD
sources NDLTD
topic 620
spellingShingle 620
Lin, Liang
Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs
author Lin, Liang
author_facet Lin, Liang
author_sort Lin, Liang
title Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs
title_short Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs
title_full Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs
title_fullStr Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs
title_full_unstemmed Modelling of high-K gate oxides on GaAs and Ge based high mobility MOSFETs
title_sort modelling of high-k gate oxides on gaas and ge based high mobility mosfets
publisher University of Cambridge
publishDate 2011
url http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.609643
work_keys_str_mv AT linliang modellingofhighkgateoxidesongaasandgebasedhighmobilitymosfets
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