Luminescence study of III-nitride semiconductor nanostructures and LEDs

In this work, cathodoluminescence (CL) hyperspectral imaging, photoluminescence (PL) and electroluminescence are used to study the optical properties of III-nitride semiconductor materials. III-nitride semiconductors have successfully opened up the solid-state lighting market. Light-emitting diodes...

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Main Author: Bruckbauer, Jochen
Published: University of Strathclyde 2013
Subjects:
530
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.605935
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spelling ndltd-bl.uk-oai-ethos.bl.uk-6059352015-12-03T03:52:40ZLuminescence study of III-nitride semiconductor nanostructures and LEDsBruckbauer, Jochen2013In this work, cathodoluminescence (CL) hyperspectral imaging, photoluminescence (PL) and electroluminescence are used to study the optical properties of III-nitride semiconductor materials. III-nitride semiconductors have successfully opened up the solid-state lighting market. Light-emitting diodes (LEDs) fabricated using III-nitrides, however, still suffer from numerous deficiencies such as high defect densities, efficiency droop and the 'green gap'. In order to investigate the type and properties of the defects, CL and electron channelling contrast imaging (ECCI) were performed on the same micron-scale area of a GaN thin film. A one-to-one correlation between isolated dark spots in CL and threading dislocations (TDs) in ECCI showed that TDs of pure edge character and TDs with a screw component act as non-radiative recombination centres. Secondary electron imaging of planar InGaN/GaN multiple quantum well (MQW) structures identified trench defects of varying width. CL imaging re vealed a strong redshift (90 meV) and intensity increase for trench defects with wide trenches compared with the defect-free surrounding area. Narrower trench defects showed a small redshift (10 meV) and a slight reduction in intensity. The optical properties of nanorods fabricated from planar InGaN/GaN MQW structures were investigated using PL and CL. PL spectroscopy identified reduced strain within the MQW stack in the nanorods compared with the planar structure. CL imaging of single nanorods revealed a redshift of 18 meV of the MQW emission along the nanorod axis and provided an estimate of 55 nm for the carrier diffusion length. Colour conversion using novel organic compounds as energy down-converters was studied. The first molecules absorbed in the ultra-violet and emitted in the yellow spectral region. Further modification of the organic compound shifted the absorption into the blue and white light generation was investigated by coating blue-emitting nanorods and blue LED determination of the colour rendering index and colour temperature showed "warm white" light emission with values of 70 and 3220 K, respectively.530University of Strathclydehttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.605935http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=23055Electronic Thesis or Dissertation
collection NDLTD
sources NDLTD
topic 530
spellingShingle 530
Bruckbauer, Jochen
Luminescence study of III-nitride semiconductor nanostructures and LEDs
description In this work, cathodoluminescence (CL) hyperspectral imaging, photoluminescence (PL) and electroluminescence are used to study the optical properties of III-nitride semiconductor materials. III-nitride semiconductors have successfully opened up the solid-state lighting market. Light-emitting diodes (LEDs) fabricated using III-nitrides, however, still suffer from numerous deficiencies such as high defect densities, efficiency droop and the 'green gap'. In order to investigate the type and properties of the defects, CL and electron channelling contrast imaging (ECCI) were performed on the same micron-scale area of a GaN thin film. A one-to-one correlation between isolated dark spots in CL and threading dislocations (TDs) in ECCI showed that TDs of pure edge character and TDs with a screw component act as non-radiative recombination centres. Secondary electron imaging of planar InGaN/GaN multiple quantum well (MQW) structures identified trench defects of varying width. CL imaging re vealed a strong redshift (90 meV) and intensity increase for trench defects with wide trenches compared with the defect-free surrounding area. Narrower trench defects showed a small redshift (10 meV) and a slight reduction in intensity. The optical properties of nanorods fabricated from planar InGaN/GaN MQW structures were investigated using PL and CL. PL spectroscopy identified reduced strain within the MQW stack in the nanorods compared with the planar structure. CL imaging of single nanorods revealed a redshift of 18 meV of the MQW emission along the nanorod axis and provided an estimate of 55 nm for the carrier diffusion length. Colour conversion using novel organic compounds as energy down-converters was studied. The first molecules absorbed in the ultra-violet and emitted in the yellow spectral region. Further modification of the organic compound shifted the absorption into the blue and white light generation was investigated by coating blue-emitting nanorods and blue LED determination of the colour rendering index and colour temperature showed "warm white" light emission with values of 70 and 3220 K, respectively.
author Bruckbauer, Jochen
author_facet Bruckbauer, Jochen
author_sort Bruckbauer, Jochen
title Luminescence study of III-nitride semiconductor nanostructures and LEDs
title_short Luminescence study of III-nitride semiconductor nanostructures and LEDs
title_full Luminescence study of III-nitride semiconductor nanostructures and LEDs
title_fullStr Luminescence study of III-nitride semiconductor nanostructures and LEDs
title_full_unstemmed Luminescence study of III-nitride semiconductor nanostructures and LEDs
title_sort luminescence study of iii-nitride semiconductor nanostructures and leds
publisher University of Strathclyde
publishDate 2013
url http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.605935
work_keys_str_mv AT bruckbauerjochen luminescencestudyofiiinitridesemiconductornanostructuresandleds
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