Reduction and characterisation of threading dislocations in GaN and its alloys
Due to the unavailability of bulk defect-free GaN substrates, GaN is grown hetero-epitaxially on substrates which have a substantial lattice mismatch. As a consequence, a large population of threading dislocations (TDs), typically 10<sup>9</sup> – 10<sup>10</sup> cm<sup>...
| Main Author: | |
|---|---|
| Published: |
University of Cambridge
2006
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598299 |