A transmission electron microscopy study of AlGaN/GaN heterostructures
The use of an A1N interlayer to allow the growth of crack-free AlGaN on a GaN template is investigated. The impact of using an A1N interlayer on the active region of a device is examined by investigating a series of GaN/AlGaN quantum well structures. It is observed by WBDF that the a-type dislocatio...
| Main Author: | |
|---|---|
| Published: |
University of Cambridge
2007
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597581 |