Deposition and material characterisation of alternative high-K gate oxides
This thesis investigates the relation between the growth process, structure and properties of three potential high dielectric constant (high-K) gate oxides as replacements for silicon dioxide (SiO<sub>2</sub>) in Complementary Metal-Oxide-Semiconductor (CMOS) process. Production of high...
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University of Cambridge
2004
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597522 |