Nano scale devices based on one dimensional nanostructure

• Main Author: Cha, S. N.
• Published: University of Cambridge 2006
• Subjects: 621.3
• Online Access: http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.597380

Fabrication and characterization of nanometre scale devices consisting of a suspended nanotube/nanowire and self-aligned electrodes is reported. An electromechnical switch and a field effect transistor have been realised using the nano device technology developed. The electromechanical switch has a triode structure and is designed so that a suspended carbon nanotube is mechanically switched to one of two self-aligned electrodes by repulsive electrostatic forces between the nanotube and the self-aligned electrode. The electrical measurements show well defined On and Off states with change of gate voltage. The measured threshold voltage for electromechanical switching is 3.6 V. A field effect transistor (FET) using a zinc oxide nanowire with significantly enhanced performance is demonstrated. The fabricated FET exhibits superior electrical performance with a transconductance of 3.06 μS, a mobility of 928 cm²/Vs and an On/Off ratio 10⁶. The electrical characteristics are the best obtained to date for a ZnO nanowire transistor. The results are close to those reported previously for p-type Carbon Nanotube FETs. This raises the possibility of using ZnO as the n-type FET with a CNT as the p-type FET in nanometre scale complimentary logic circuits.