Investigation of narrow gap dilute nitride materials for mid-infrared optoelectronic devices
This project investigates dilute nitrides such as InAsN and InGaAsN with a view to the fabrication of optoelectronic sources and detectors operating in the mid-infrared (2-5 um) spectral range which has many practical applications. Samples of both bulk epitaxial layers and state-of-the-art nanostruc...
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Lancaster University
2011
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.587052 |