Optoelectronic characterisation of III-V antimonide and nitride alloys grown on GaAs
III-V semiconductor alloys possess interesting electronic properties that can be engineered and optimised for highly-efficient light absorption and emission in optoelectronic devices. Although GaAs is by far the most mature and cost-effective III-V semiconductor material, its use as a starting mater...
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University of Sheffield
2012
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.577993 |