Native defects in the group III nitrides
The promise of the broad range of direct band gaps of the (Al,Ga,In)N system is limited by the crystal quality of current material. As grown defect densities of InN, when compared with the more mature GaN, are extremely high and InN is strongly influenced by these defects. This is particularly impor...
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University of Strathclyde
2013
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.576461 |