Single donors in silicon for atomic scale devices
This thesis describes a detailed characterization of the atomic scale properties of individual donor atoms in silicon. A cross sectional sample preparation technique was developed, allowing us to study cleaved silicon surfaces using scanning tunnelling microscopy (STM). The Si(111)-2x1 surface is ch...
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University College London (University of London)
2011
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.565482 |