Electron accumulation and doping in InN and InGaN alloys
InN and group III nitride materials have attracted great interest due to their potential applications for optoelectronic devices, as the range of band gaps cover the ultra-violet to the near infrared. InN and all In-rich InxGa1−xN alloys exhibit a surface electron accumulation layer. This is due to...
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University of Warwick
2012
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.560340 |