Dielectics on germanium : electrical and interfacial properties
Over the past decades, the continuous reduction in Si02/Si device dimensions has been approaching its technological and fundamental limits. This opens a possibility of novel channel materials and high-x dielectrics to be implemented for future CMOS field-effect transistors (FETs). Germanium has rece...
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Queen's University Belfast
2011
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.558183 |