Optical spectroscopy of wide bandgap semiconductor nanoscale structures

The optical properties of GaN nanocolumn structures containing InGaN quantum disks are investigated by optical microphotoluminescence spectroscopy using pulsed lasers, and cathodo- luminescence. The results are analyzed in the context of current theories regarding an inho- mogeneous strain distribut...

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Main Author: Holmes, Mark J.
Other Authors: Taylor, R. A.
Published: University of Oxford 2011
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Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.555374
id ndltd-bl.uk-oai-ethos.bl.uk-555374
record_format oai_dc
spelling ndltd-bl.uk-oai-ethos.bl.uk-5553742015-03-20T04:38:24ZOptical spectroscopy of wide bandgap semiconductor nanoscale structuresHolmes, Mark J.Taylor, R. A.2011The optical properties of GaN nanocolumn structures containing InGaN quantum disks are investigated by optical microphotoluminescence spectroscopy using pulsed lasers, and cathodo- luminescence. The results are analyzed in the context of current theories regarding an inho- mogeneous strain distribution in the disk which has been theorized to generate lateral charge separation in the disks by strain induced band bending, an inhomogeneous polarization field distribution, and Fermi surface pinning. Simulations of the strain distribution for the relevant materials and structures are also performed, and the results analysed. It is concluded from ex- perimental measurements that no extreme lateral separation of carriers occurs in the quantum disks under investigation. Internal field screening by an increased carrier density in the QDisks at higher excitation densities is observed via a blue-shift of the emission and a dynamically changing decay time. Other possible explanations for these effects are discussed and discounted. Microphotoluminescence studies are also carried out on a single GaN nanocolumn struc- ture that has been removed from its growth substrate and dispersed onto a patterned grid. An analysis of the dynamics of the carriers in the nanocolumn is presented. Suppression of the GaN luminescence from the area of the column in the vicinity of the InGaN QDisk in addition to a delayed emission from the QDisk relative to the GaN is observed. Time resolved spatial maps of the luminescence intensity from the column are also presented, illustrating the evolution of the carrier density in the system. Additional, albeit early-stage, work on novel structures based on the production of GaN nanocolumns, namely nanotubes and nanopyramids, is also presented.530.41Nanomaterials : GaN : nanocolumnUniversity of Oxfordhttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.555374http://ora.ox.ac.uk/objects/uuid:b8318654-dd3a-4875-8a8e-1e57d877b0f2Electronic Thesis or Dissertation
collection NDLTD
sources NDLTD
topic 530.41
Nanomaterials : GaN : nanocolumn
spellingShingle 530.41
Nanomaterials : GaN : nanocolumn
Holmes, Mark J.
Optical spectroscopy of wide bandgap semiconductor nanoscale structures
description The optical properties of GaN nanocolumn structures containing InGaN quantum disks are investigated by optical microphotoluminescence spectroscopy using pulsed lasers, and cathodo- luminescence. The results are analyzed in the context of current theories regarding an inho- mogeneous strain distribution in the disk which has been theorized to generate lateral charge separation in the disks by strain induced band bending, an inhomogeneous polarization field distribution, and Fermi surface pinning. Simulations of the strain distribution for the relevant materials and structures are also performed, and the results analysed. It is concluded from ex- perimental measurements that no extreme lateral separation of carriers occurs in the quantum disks under investigation. Internal field screening by an increased carrier density in the QDisks at higher excitation densities is observed via a blue-shift of the emission and a dynamically changing decay time. Other possible explanations for these effects are discussed and discounted. Microphotoluminescence studies are also carried out on a single GaN nanocolumn struc- ture that has been removed from its growth substrate and dispersed onto a patterned grid. An analysis of the dynamics of the carriers in the nanocolumn is presented. Suppression of the GaN luminescence from the area of the column in the vicinity of the InGaN QDisk in addition to a delayed emission from the QDisk relative to the GaN is observed. Time resolved spatial maps of the luminescence intensity from the column are also presented, illustrating the evolution of the carrier density in the system. Additional, albeit early-stage, work on novel structures based on the production of GaN nanocolumns, namely nanotubes and nanopyramids, is also presented.
author2 Taylor, R. A.
author_facet Taylor, R. A.
Holmes, Mark J.
author Holmes, Mark J.
author_sort Holmes, Mark J.
title Optical spectroscopy of wide bandgap semiconductor nanoscale structures
title_short Optical spectroscopy of wide bandgap semiconductor nanoscale structures
title_full Optical spectroscopy of wide bandgap semiconductor nanoscale structures
title_fullStr Optical spectroscopy of wide bandgap semiconductor nanoscale structures
title_full_unstemmed Optical spectroscopy of wide bandgap semiconductor nanoscale structures
title_sort optical spectroscopy of wide bandgap semiconductor nanoscale structures
publisher University of Oxford
publishDate 2011
url http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.555374
work_keys_str_mv AT holmesmarkj opticalspectroscopyofwidebandgapsemiconductornanoscalestructures
_version_ 1716785964149374976