Low temperature phonon-drag thermoelectric power calculations in GaAs/GaAlAs heterojunctions and Si MOSFETs

The effect on the electron transport of the confinement of the electrons to a narrow channel in GaAs/GaAlAs heterojunctions and Si MOSFETs is reflected in quantities like the thermopower (S) which is sensitive to the transport of both heat and charge. The calculations described here confirm that in...

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Bibliographic Details
Main Author: Smith, Mark John
Published: University of Warwick 1989
Subjects:
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.528606