Low temperature (<150°C) hydrogenated amorphous silicongrown by PECVD with source gas heating

Low temperature « 150°C) hydrogenated amorphous silicon grown by PECVD with source gas heating Richard Barrie Michael Cross Hydrogenated amorphous silicon (a-Si:H) is a semiconductor that is widely used in a variety of applications. A particularly important development has been the incorporation of...

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Bibliographic Details
Main Author: Cross, Richard Barrie Michael
Published: De Montfort University 2005
Subjects:
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.502097