Telecommunication wavelength InP based avalanche photodiodes
A systematic study of the avalanche multiplication behaviour in InP has been performed on a series of diodes with avalanche region widths, w, ranging from 2.50 to 0.08 μm, covering a wide electric field range from 180 to 850kV/cm. The local model for impact ionisation is found to increasingly overes...
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University of Sheffield
2008
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.489074 |
| Summary: | A systematic study of the avalanche multiplication behaviour in InP has been performed on a series of diodes with avalanche region widths, w, ranging from 2.50 to 0.08 μm, covering a wide electric field range from 180 to 850kV/cm. The local model for impact ionisation is found to increasingly overestimate the multiplication at low electric fields as w decreases due to the presence of dead space. The dead space is also found to decrease the excess noise. An excess noise factor of F = 3.5 at multiplication factor M= 10 was measured, the lowest value reported so far in InP. |
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