Impact ionisation in InGaAs, InA1As and InGaAs/GaAsSb superlattices for near infrared avalanche photodetectors

Impact ionisation in InGaAs, InA1As and InGaAs/GaAsSb superlattices for near infrared avalanche photodetectors

This work investigates the avalanche characteristics of ln0.53Ga0.47As, In0.52Al0.48As and type-II heterojunction material systems for applications in telecommunication and next generation mid-wave infrared avalanche photodiodes (APDs). This work carries out the first ever reported excess noise meas...

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Bibliographic Details
Main Author: Goh, Yu Ling
Published: University of Sheffield 2008
Subjects:
621.36
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.489051
id ndltd-bl.uk-oai-ethos.bl.uk-489051
record_format oai_dc
spelling ndltd-bl.uk-oai-ethos.bl.uk-4890512015-03-20T05:12:05ZImpact ionisation in InGaAs, InA1As and InGaAs/GaAsSb superlattices for near infrared avalanche photodetectorsGoh, Yu Ling2008This work investigates the avalanche characteristics of ln0.53Ga0.47As, In0.52Al0.48As and type-II heterojunction material systems for applications in telecommunication and next generation mid-wave infrared avalanche photodiodes (APDs). This work carries out the first ever reported excess noise measured on a series of In0.53Ga0.47As p+-in+& diodes Electron initiated multiplication exhibit very low excess noise due to the large difference between the electron and hole ionisation coefficients in In0.53Ga0.47As. The behaviour is unlike Ge, which has a similar spectral response.621.36University of Sheffieldhttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.489051Electronic Thesis or Dissertation
collection NDLTD
sources NDLTD
topic 621.36
spellingShingle 621.36
Goh, Yu Ling
Impact ionisation in InGaAs, InA1As and InGaAs/GaAsSb superlattices for near infrared avalanche photodetectors
description This work investigates the avalanche characteristics of ln0.53Ga0.47As, In0.52Al0.48As and type-II heterojunction material systems for applications in telecommunication and next generation mid-wave infrared avalanche photodiodes (APDs). This work carries out the first ever reported excess noise measured on a series of In0.53Ga0.47As p+-in+& diodes Electron initiated multiplication exhibit very low excess noise due to the large difference between the electron and hole ionisation coefficients in In0.53Ga0.47As. The behaviour is unlike Ge, which has a similar spectral response.
author Goh, Yu Ling
author_facet Goh, Yu Ling
author_sort Goh, Yu Ling
title Impact ionisation in InGaAs, InA1As and InGaAs/GaAsSb superlattices for near infrared avalanche photodetectors
title_short Impact ionisation in InGaAs, InA1As and InGaAs/GaAsSb superlattices for near infrared avalanche photodetectors
title_full Impact ionisation in InGaAs, InA1As and InGaAs/GaAsSb superlattices for near infrared avalanche photodetectors
title_fullStr Impact ionisation in InGaAs, InA1As and InGaAs/GaAsSb superlattices for near infrared avalanche photodetectors
title_full_unstemmed Impact ionisation in InGaAs, InA1As and InGaAs/GaAsSb superlattices for near infrared avalanche photodetectors
title_sort impact ionisation in ingaas, ina1as and ingaas/gaassb superlattices for near infrared avalanche photodetectors
publisher University of Sheffield
publishDate 2008
url http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.489051
work_keys_str_mv AT gohyuling impactionisationiningaasina1asandingaasgaassbsuperlatticesfornearinfraredavalanchephotodetectors
_version_ 1716789540862033920

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