Field-assisted tunnelling from surface states in germanium and silicon, and tunnelling current versus voltage characteristics in metal-insulator-metal films and p-n junctions

Field-assisted tunnelling from surface states in germanium and silicon, and tunnelling current versus voltage characteristics in metal-insulator-metal films and p-n junctions

Bibliographic Details
Main Author:	Kerkides, P. G.
Published:	University of Salford 1976
Subjects:	621.3
Online Access:	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.461809

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