Electrical Measurements in Silicon Inversion Layers at Low Temperatures

Bibliographic Details
Main Author:	Johnson, T.
Published:	Lancaster University 1976
Subjects:	530.412
Online Access:	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.461000

id	ndltd-bl.uk-oai-ethos.bl.uk-461000
record_format	oai_dc
spelling	ndltd-bl.uk-oai-ethos.bl.uk-4610002017-12-24T16:06:24ZElectrical Measurements in Silicon Inversion Layers at Low TemperaturesJohnson, T.1976530.412Lancaster Universityhttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.461000Electronic Thesis or Dissertation
collection	NDLTD
sources	NDLTD
topic	530.412
spellingShingle	530.412 Johnson, T. Electrical Measurements in Silicon Inversion Layers at Low Temperatures
author	Johnson, T.
author_facet	Johnson, T.
author_sort	Johnson, T.
title	Electrical Measurements in Silicon Inversion Layers at Low Temperatures
title_short	Electrical Measurements in Silicon Inversion Layers at Low Temperatures
title_full	Electrical Measurements in Silicon Inversion Layers at Low Temperatures
title_fullStr	Electrical Measurements in Silicon Inversion Layers at Low Temperatures
title_full_unstemmed	Electrical Measurements in Silicon Inversion Layers at Low Temperatures
title_sort	electrical measurements in silicon inversion layers at low temperatures
publisher	Lancaster University
publishDate	1976
url	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.461000
work_keys_str_mv	AT johnsont electricalmeasurementsinsiliconinversionlayersatlowtemperatures
_version_	1718572993402109952

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