Experimental study on the reliability of strained Si MOSFETs on varied technology platforms

Experimental study on the reliability of strained Si MOSFETs on varied technology platforms

Bibliographic Details
Main Author: Agaiby, Rimoon Michael Behnam
Published: University of Newcastle Upon Tyne 2007
Subjects:
621.3815284
Online Access:http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.443988
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spelling ndltd-bl.uk-oai-ethos.bl.uk-4439882015-03-19T06:33:35ZExperimental study on the reliability of strained Si MOSFETs on varied technology platformsAgaiby, Rimoon Michael Behnam2007621.3815284University of Newcastle Upon Tynehttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.443988Electronic Thesis or Dissertation
collection NDLTD
sources NDLTD
topic 621.3815284
spellingShingle 621.3815284
Agaiby, Rimoon Michael Behnam
Experimental study on the reliability of strained Si MOSFETs on varied technology platforms
author Agaiby, Rimoon Michael Behnam
author_facet Agaiby, Rimoon Michael Behnam
author_sort Agaiby, Rimoon Michael Behnam
title Experimental study on the reliability of strained Si MOSFETs on varied technology platforms
title_short Experimental study on the reliability of strained Si MOSFETs on varied technology platforms
title_full Experimental study on the reliability of strained Si MOSFETs on varied technology platforms
title_fullStr Experimental study on the reliability of strained Si MOSFETs on varied technology platforms
title_full_unstemmed Experimental study on the reliability of strained Si MOSFETs on varied technology platforms
title_sort experimental study on the reliability of strained si mosfets on varied technology platforms
publisher University of Newcastle Upon Tyne
publishDate 2007
url http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.443988
work_keys_str_mv AT agaibyrimoonmichaelbehnam experimentalstudyonthereliabilityofstrainedsimosfetsonvariedtechnologyplatforms
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