Structural, compositional and ICP processing analysis of CBE grown InGaAsN/GaAs
This thesis details the structural and elemental analysis of the III-V quaternary InGaAsN, and subsequent post growth plasma processing of the alloy. The aim of the work was to investigate the varying properties of the material with respect to the CBE growth conditions during deposition. Primarily t...
| Main Author: | |
|---|---|
| Published: |
University of Liverpool
2003
|
| Subjects: | |
| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.428218 |