Antimony implants for ultra-shallow junctions in silicon
This thesis reports a study of a viable way to produce ultra-shallow n-p junctions for the next generation of CMOS devices (10-20nm node or logic technology). The ion implantation of an alternative species to arsenic (As) namely antimony (Sb) for n-type doping in silicon has been investigated. Being...
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University of Surrey
2004
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.411003 |