Titanium disilicide for VLSI applications
This thesis demonstrates that the formation of titanium disilicide for gate level interconnects in silicon VLSI processes is possible, and is compatible with the processes considered. By using this new material the operating speed of fine geometry integrated circuits can be increased. The first two...
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University of Surrey
1987
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.378206 |