The fabrication of very short gate-length GaAs field effect transistor devices

The fabrication of very short gate-length GaAs field effect transistor devices

Bibliographic Details
Main Author:	Patrick, W.
Published:	University of Glasgow 1985
Subjects:	621.31042 Transistor device fabrication
Online Access:	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.378152

Similar Items

Investigation into the noise performance of short gate-length FETS and their application in lightwave receivers
by: Greaves, Stephen David
Published: (1994)

Fabrication and characterisation of the Heterojunction field effect transistor (HFET) and the bipolar inversion channel field effect transistor (BIFCET)
by: Lebby, M. S.
Published: (1987)

Cathodoluminescence and transmission electron microscopy characterization of GaAs/A1GaAs and InGaAS/InP quantum well structures
by: Wang, Jian-nong
Published: (1990)

Characterisation and fabrication of heterojunction bipolar transistors
by: Mawby, P. A.
Published: (1988)

The electronic structure and optical properties of GaAs two-dimensional electron systems
by: Richards, David Robert
Published: (1990)

Characterisation of the physical behaviour of GaAs MESFETs
by: Barton, T. M.
Published: (1988)

Hot carrier relaxation in GaAs quantum wells and V-groove quantum wires
by: Turner, Keith
Published: (1995)

Optimisation of submicron low-noise GaAs MESFETs
by: Ahmed, Muhammad Mansoor
Published: (1995)

Two-dimensional numerical simulation of VDMOS transistors
by: Davies, J. T.
Published: (1985)

Temperature dependance of silicon bipolar transistor D.C. parameters
by: Hayes, R. C.
Published: (1986)

A study of microwave devices design methods for GaAs mesfet oscillators
by: Farquhar, S. G.
Published: (1980)

Modelling and analysis of GaAs dual gate MESFETS microwave mixers
by: Xue, Hongxi
Published: (1990)

The fabrication and evaluation of silicon MOSFETs with 0.5 to 0.1 micron gate lengths
by: Reeves, Clive Malcolm
Published: (1987)

An experimental and theoretical study of InGaP-GaAs double heterojunction bipolar transistors
by: Lee, Tae-Woo
Published: (1992)

A study of failure locus of NPN transistors and its improvement using graded collector structures
by: Humphreys, M. J.
Published: (1988)

Minority carrier effects in small geometry MOS devices
by: Childs, P. A.
Published: (1984)

Influence of preparation condition on hydrogenated amorphous silicon FETs
by: Manookian, Wahak Z.
Published: (1987)

Electrical conduction in 3-5 semiconductor structures
by: Judd, Thomas Patrick Charles
Published: (1987)

An experimental study of Alâ†xGaâ†0â†.â†5â†2â†-â†xInâ†0â†.â†4â†8P/GaAs heterojunction bipolar transistors
by: Yow, Ho Kwang
Published: (1995)

Comprehensive assessment of GaAs substrates for integrated circuit applications
by: Clark, Stephen
Published: (1990)

Diffusion induced disordering in AIAs-GaAs superlattice by zinc
by: Ho, H. P.
Published: (1989)

Small signal analysis of GaAs/Al(Ga)As resonant tunnel diodes and their circuit applications
by: Zarea, A.
Published: (1993)

Characteristics of UHF transistors using autoregistered structures
by: Camp, Robert Paul
Published: (1986)

Electronic and thermal transport in free-standing silicon and GaAs wires
by: Potts, Adrian
Published: (1990)

GaAs monolithic control devices and circuits
by: Tayrani, R.
Published: (1986)

The growth and characterisation of silicon alloys for heterojunction bipolar transistor applications
by: Roberts, Victoria
Published: (1994)

An investigation of the influence of substrate impurities on ion implanted GaAs MASFET performance
by: McIntyre, N.
Published: (1981)

Transmission electron microscope studies of emitters of silicon bipolar transistors
by: Gold, Daniel Patrick
Published: (1989)

GaAs/Langmuir-Blodgett film MIS devices
by: Thomas, Nicholas John
Published: (1986)

Excess voltage noise in ohmic silicon JFETs
by: Bhatti, G. S.
Published: (1983)

Thermal design considerations for GaAs transferred-electron devices
by: Batchelor, Andrew Robert
Published: (1990)

Surface and bulk traps in materials and devices for GaAs integrated circuits
by: Blight, S. R.
Published: (1987)

PNP polysilicon emitter bipolar transistors
by: Post, Ian R. C.
Published: (1992)

The fabrication and dynamic characteristics of novel magnetic bubble devices
by: Ronan, G. A.
Published: (1985)

Gate controlled transport in a GaAs:AlGaAs heterojunction
by: Thornton, T. J.
Published: (1987)

Physical constraints on the switching speeds of power transistors
by: Finney, Adrian David
Published: (1990)

The use of selective epitaxy to prevent latchup in CMOS
by: Sabine, K. A.
Published: (1987)

An integrated micromachined 1.6THz Schottky diode mixer
by: Wootton, Simon T. G.
Published: (1998)

Microwave GaAs FET circuit design
by: El-Rabaie, E.-S. M.
Published: (1986)

Low temperature characterization of Si-bipolar junction transistors and Siâ†1â†-â†xGeâ†x heterojunction bipolar transistors
by: Hashim, Md Roslan
Published: (1997)