A theoretical investigation of gas source growth of the Si(001) surface
The growth of the Si(001) surface from gas sources such as disilane is technologically important, as well as scientifically interesting. The aspects of growth covered are: the clean surface, its defects and steps; the action of bismuth, a surfactant; the diffusion behaviour of hydrogen in different...
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University of Oxford
1997
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| Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.361955 |