Control of stress fields in silicon device fabrication

Bibliographic Details
Main Author:	Evans, Jonathan David
Published:	University of Oxford 1992
Subjects:	510 Silicon oxidation
Online Access:	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358664

id	ndltd-bl.uk-oai-ethos.bl.uk-358664
record_format	oai_dc
spelling	ndltd-bl.uk-oai-ethos.bl.uk-3586642015-03-19T10:31:30ZControl of stress fields in silicon device fabricationEvans, Jonathan David1992510Silicon oxidationUniversity of Oxfordhttp://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358664Electronic Thesis or Dissertation
collection	NDLTD
sources	NDLTD
topic	510 Silicon oxidation
spellingShingle	510 Silicon oxidation Evans, Jonathan David Control of stress fields in silicon device fabrication
author	Evans, Jonathan David
author_facet	Evans, Jonathan David
author_sort	Evans, Jonathan David
title	Control of stress fields in silicon device fabrication
title_short	Control of stress fields in silicon device fabrication
title_full	Control of stress fields in silicon device fabrication
title_fullStr	Control of stress fields in silicon device fabrication
title_full_unstemmed	Control of stress fields in silicon device fabrication
title_sort	control of stress fields in silicon device fabrication
publisher	University of Oxford
publishDate	1992
url	http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358664
work_keys_str_mv	AT evansjonathandavid controlofstressfieldsinsilicondevicefabrication
_version_	1716774762608328704

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