The energy and mass dependences of the carrier removal cross section in high energy light ion irradiated GaAs
In this study the energy and mass dependences of the carrier removal cross section for high energy (0.25-2.0 MeV) light ion (H[+], D[+] and He[+]) irradiation of n-type GaAs are investigated. The materials used were of two types: (i) semi-insulating bulk GaAs and (ii) Vapour Phase Epitaxially (VPE)...
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University of Surrey
1984
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.354227 |