Ion implantation of double-barrier resonant-tunnelling diodes
Many doses of ions have been implanted through near-surface AlGaAs/GaAs double-barrier diodes. The first objective of this work was the creation of a resistive layer beneath the diodes in selected areas of the wafer. It is shown that if the damage within the double-barrier diodes could be annealed w...
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University of Surrey
1996
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| Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.336532 |