Electrical properties of high resolution doping structures
The electrical transport properties and device applications of certain high resolution doping structures in silicon are discussed in this thesis. The promise of enhanced device properties from a high resolution doping structure was envisaged through the use of doping supeelattices. These structures...
Main Author: | Biswas, Robin Gopal |
---|---|
Published: |
University of Warwick
1992
|
Subjects: | |
Online Access: | https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.332605 |
Similar Items
-
The MBE growth and electrical characterisation of high resolution doped Si/GeSi structures
by: Basaran, Engin
Published: (1995) -
On the electrical and structural properties of boron delta layers in silicon
by: Mattey, Nevil L.
Published: (1991) -
The electrical properties and structure of halo-borate glasses and glass-ceramics
by: Daniels, Phelim B.
Published: (1984) -
A high resolution multinuclear magnetic resonance study of ceramic phases
by: Smith, Mark Edmund
Published: (1987) -
Silicon molecular beam epitaxy : doping and material aspects
by: Pindoria, Govind
Published: (1990)