Atomic structure of MBE grown GaAs and Si/GaAs surfaces studies by scanning tunnelling microscopy
Main Author: | Avery, Andrew Richard |
---|---|
Published: |
Imperial College London
1995
|
Subjects: | |
Online Access: | http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.283121 |
Similar Items
-
The Characteristics of GaSb on GaAs Grown by ALE-MBE
by: Jiong-shun Huang, et al.
Published: (2004) -
Metal-semiconductor properties of MBE grown GaAs on GaAs substrate and its application
by: SHI,BO-WEN, et al.
Published: (1991) -
Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs
by: Nigamananda Samal, et al.
Published: (2010-02-01) -
MBE growth of GaAs and InAs on GaAs(001) patterned substrates
by: Chandrinou, Chryssoula
Published: (2004) -
Plasmons and phonons in MBE-grown layered GaAs and AlGaAs structures
by: Gray, Zenon
Published: (1990)